Quantum magnetotransport at a type II broken-gap single heterointerface
Identifieur interne : 000949 ( Russie/Analysis ); précédent : 000948; suivant : 000950Quantum magnetotransport at a type II broken-gap single heterointerface
Auteurs : RBID : Pascal:02-0228823Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We report the study of quantum magnetotransport in a semimetal channel at the type II broken-gap single heterointerface at magnetic field range up to 16 T at low temperature. The GaIn0.16As0.22Sb/InAs heterostructures with high quality abrupt heteroboundary (∼12 A) were fabricated by liquid phase epitaxy (LPE) on InAs substrates. Electron channel with high carrier mobility (μH = 50 000-70 000 cm2/V s) was found at the interface in the isotype p-GaInAsSb/ p-InAs heterostructure under low magnetic field up to 5 T. Three series of Shubnikov-de Haas oscillations in Hall conductivity and magnetoresistance were observed under high magnetic fields (9 16 T) at T = 1.45 K. Two of them were corresponded to 2D-electron subbands E1 and E2 with carrier concentration n1= 4.77 × 1011 cm and n2 = 1.82 x 1011 cm-2, while the significant contribution of the third one corresponding to 2D-hole subband with concentration p ∼1012 cm-2 has been pronounced in the range 13- 16 T. The most impressed result is the observation of the integer quantum Hall effect (QHE) plateaus in the Hall conductivity with the filling factor v = 2, 3 and 6 when ultraquantum limit for E1subband was realized. It is the first demonstration of QHE in a type II single GaInAsSb/InAs heterostructure with self-consistent quantum wells grown by LPE.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00F603
- to stream Main, to step Repository: 010A80
- to stream Russie, to step Extraction: 000949
Links to Exploration step
Pascal:02-0228823Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantum magnetotransport at a type II broken-gap single heterointerface</title><author><name sortKey="Moiseev, K D" uniqKey="Moiseev K">K. D. Moiseev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26, Polytekhnicheskaya Street</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>12i, Graduate Hall, Lancaster University, Bailrigg</s1><s2>Lancaster, LA1 4ZA</s2><s3>GBR</s3><sZ>1 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Lancaster, LA1 4ZA</wicri:noRegion></affiliation></author><author><name sortKey="Berezovets, V A" uniqKey="Berezovets V">V. A. Berezovets</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26, Polytekhnicheskaya Street</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Mikhailova, M P" uniqKey="Mikhailova M">M. P. Mikhailova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26, Polytekhnicheskaya Street</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Nizhankovskii, V I" uniqKey="Nizhankovskii V">V. I. Nizhankovskii</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>International High Magnetic Fields and Low-Temperature Laboratory</s1><s2>50-204 Wroclaw</s2><s3>POL</s3><sZ>4 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>International High Magnetic Fields and Low-Temperature Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Parfeniev, R V" uniqKey="Parfeniev R">R. V. Parfeniev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26, Polytekhnicheskaya Street</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26, Polytekhnicheskaya Street</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0228823</idno><date when="2001">2001</date><idno type="stanalyst">PASCAL 02-0228823 INIST</idno><idno type="RBID">Pascal:02-0228823</idno><idno type="wicri:Area/Main/Corpus">00F603</idno><idno type="wicri:Area/Main/Repository">010A80</idno><idno type="wicri:Area/Russie/Extraction">000949</idno></publicationStmt><seriesStmt><idno type="ISSN">0039-6028</idno><title level="j" type="abbreviated">Surf. sci.</title><title level="j" type="main">Surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Double heterojunction</term><term>Experimental study</term><term>Gallium antimonides</term><term>Hall conductivity</term><term>Heterostructures</term><term>Indium arsenides</term><term>LPE</term><term>Magnetic properties</term><term>Quantum effect</term><term>Transport processes</term><term>p-type conductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Hétérostructure</term><term>Hétérojonction double</term><term>Semiconducteur type p</term><term>Indium arséniure</term><term>Gallium antimoniure</term><term>Epitaxie phase liquide</term><term>Phénomène transport</term><term>Propriété magnétique</term><term>Conductivité Hall</term><term>Effet quantique</term><term>7570C</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the study of quantum magnetotransport in a semimetal channel at the type II broken-gap single heterointerface at magnetic field range up to 16 T at low temperature. The GaIn<sub>0.16</sub>As<sub>0.22</sub>Sb/InAs heterostructures with high quality abrupt heteroboundary (∼12 A) were fabricated by liquid phase epitaxy (LPE) on InAs substrates. Electron channel with high carrier mobility (μ<sub>H</sub> = 50 000-70 000 cm<sup>2</sup>/V s) was found at the interface in the isotype p-GaInAsSb/ p-InAs heterostructure under low magnetic field up to 5 T. Three series of Shubnikov-de Haas oscillations in Hall conductivity and magnetoresistance were observed under high magnetic fields (9 16 T) at T = 1.45 K. Two of them were corresponded to 2D-electron subbands E<sub>1</sub> and E<sub>2</sub> with carrier concentration n<sub>1</sub>= 4.77 × 10<sup>11</sup> cm and n<sub>2</sub> = 1.82 x 10<sup>11</sup> cm<sup>-2</sup>, while the significant contribution of the third one corresponding to 2D-hole subband with concentration p ∼10<sup>12</sup> cm<sup>-2</sup> has been pronounced in the range 13- 16 T. The most impressed result is the observation of the integer quantum Hall effect (QHE) plateaus in the Hall conductivity with the filling factor v = 2, 3 and 6 when ultraquantum limit for E<sub>1</sub>subband was realized. It is the first demonstration of QHE in a type II single GaInAsSb/InAs heterostructure with self-consistent quantum wells grown by LPE.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0></fA01><fA02 i1="01"><s0>SUSCAS</s0></fA02><fA03 i2="1"><s0>Surf. sci.</s0></fA03><fA05><s2>482-85</s2></fA05><fA06><s3>PART2</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Quantum magnetotransport at a type II broken-gap single heterointerface</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>ECOSS-19: proceedings of the 19th European conference on surface science, Madrid, Spain, 5-8 September 2000. Part II</s1></fA09><fA11 i1="01" i2="1"><s1>MOISEEV (K. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>BEREZOVETS (V. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>MIKHAILOVA (M. P.)</s1></fA11><fA11 i1="04" i2="1"><s1>NIZHANKOVSKII (V. I.)</s1></fA11><fA11 i1="05" i2="1"><s1>PARFENIEV (R. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>YAKOVLEV (Yu. P.)</s1></fA11><fA12 i1="01" i2="1"><s1>FARIAS (D.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GALLEGO (José Maria)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>DE MIGUEL (Juan José)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>PRIETO (José Emilio)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>VAZQUEZ DE PARGA (A. L.)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>MICHEL (Enrique G.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26, Polytekhnicheskaya Street</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>12i, Graduate Hall, Lancaster University, Bailrigg</s1><s2>Lancaster, LA1 4ZA</s2><s3>GBR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>International High Magnetic Fields and Low-Temperature Laboratory</s1><s2>50-204 Wroclaw</s2><s3>POL</s3><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Departamento de Fisica de la Materia Condensada and Instituto Universitario de Ciencia de Materiales "Nicolas Cabrera", Universidad Autonoma de Madrid</s1><s2>Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Physical Society. Surface and Interface Division</s1><s3>EUR</s3><s9>patr.</s9></fA18><fA18 i1="02" i2="1"><s1>International Union for Vacuum Science, Technique and Applications. Surface Division</s1><s2>Brussels</s2><s3>BEL</s3><s9>patr.</s9></fA18><fA20><s1>1083-1089</s1></fA20><fA21><s1>2001</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12426</s2><s5>354000098619080540</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0228823</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the study of quantum magnetotransport in a semimetal channel at the type II broken-gap single heterointerface at magnetic field range up to 16 T at low temperature. The GaIn<sub>0.16</sub>As<sub>0.22</sub>Sb/InAs heterostructures with high quality abrupt heteroboundary (∼12 A) were fabricated by liquid phase epitaxy (LPE) on InAs substrates. Electron channel with high carrier mobility (μ<sub>H</sub> = 50 000-70 000 cm<sup>2</sup>/V s) was found at the interface in the isotype p-GaInAsSb/ p-InAs heterostructure under low magnetic field up to 5 T. Three series of Shubnikov-de Haas oscillations in Hall conductivity and magnetoresistance were observed under high magnetic fields (9 16 T) at T = 1.45 K. Two of them were corresponded to 2D-electron subbands E<sub>1</sub> and E<sub>2</sub> with carrier concentration n<sub>1</sub>= 4.77 × 10<sup>11</sup> cm and n<sub>2</sub> = 1.82 x 10<sup>11</sup> cm<sup>-2</sup>, while the significant contribution of the third one corresponding to 2D-hole subband with concentration p ∼10<sup>12</sup> cm<sup>-2</sup> has been pronounced in the range 13- 16 T. The most impressed result is the observation of the integer quantum Hall effect (QHE) plateaus in the Hall conductivity with the filling factor v = 2, 3 and 6 when ultraquantum limit for E<sub>1</sub>subband was realized. It is the first demonstration of QHE in a type II single GaInAsSb/InAs heterostructure with self-consistent quantum wells grown by LPE.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70E70C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Heterostructures</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Hétérojonction double</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Double heterojunction</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Heterounión doble</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur type p</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>p-type conductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium antimoniure</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>LPE</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Phénomène transport</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Transport processes</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Propriété magnétique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Magnetic properties</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Conductivité Hall</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Hall conductivity</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Conductividad Hall</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Effet quantique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Quantum effect</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Efecto cuántico</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>7570C</s0><s2>PAC</s2><s4>INC</s4><s5>92</s5></fC03><fN21><s1>133</s1></fN21><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ECOSS-19: European Conference on Surface Science</s1><s2>19</s2><s3>Madrid ESP</s3><s4>2000-09-05</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000949 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000949 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:02-0228823
|texte= Quantum magnetotransport at a type II broken-gap single heterointerface
}}
| This area was generated with Dilib version V0.5.77. |  |